Selective Area Growth: Gustavberg, and Rålies Stockholm
Selective Area Color Splash in Photoshop
SiC Epitaxial Growth
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask.
SAE is formed by opening seed windows on an oxidized Silicon substrate which is typically < 100 > in orientation. The seed window edges are aligned at 45" to the wafer flat, and are along the  direction. Epitaxial growth is initiated selectively in the seed windows on the exposed regions. The growth is referred to as Selective Epitaxial Growth (SEG) when the Silicon is confined within the oxide walls, and until it reaches the level of the oxide. If the growth is continued, the Silicon grows out of the seed hole and laterally over the masking oxide to produce a single crystal layer of Silicon called Epitaxial Lateral Overgrowth (ELO)
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